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This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N6051. The maximum collector current includes 12a. It features bipolar (bjt) transistor pnp - darlington 80v 12a 150w through hole to-3 (to-204aa). Furthermore, 1000 @ 6a, 3v is the minimum DC current gain at given voltage. The transistor is a pnp - darlington type. The product is available in through hole configuration. The 3v @ 120ma, 12a is the maximum Vce saturation. The product military, mil-prf-19500/501, is a highly preferred choice for users. Moreover, the product comes in to-3. to-3 (to-204aa) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 150w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 1ma is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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