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This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N3868. The maximum collector current includes 3a. It features bipolar (bjt) transistor pnp 60v 3a 1w through hole to-5. Furthermore, 30 @ 1.5a, 2v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 1.5v @ 250ma, 2.5a is the maximum Vce saturation. The product military, mil-prf-19500/350, is a highly preferred choice for users. Moreover, the product comes in to-205aa, to-5-3 metal can. to-5 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 100µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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