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This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N3019S. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 1a. It features bipolar (bjt) transistor npn 80v 1a 800mw through hole to-39. Furthermore, 50 @ 500ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 500mv @ 50ma, 500ma is the maximum Vce saturation. The product military, mil-prf-19500/391, is a highly preferred choice for users. Moreover, the product comes in to-205ad, to-39-3 metal can. to-39 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 800mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10na is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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