Microsemi Corporation JANTXV2N6308

Microsemi Corporation

Product Information

Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
8A
Detailed Description:
Bipolar (BJT) Transistor NPN 350V 8A 125W Through Hole TO-204AA (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
12 @ 3A, 5V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
5V @ 2.67A, 8A
Series:
Military, MIL-PRF-19500/498
Package / Case:
TO-204AA, TO-3
Supplier Device Package:
TO-204AA (TO-3)
Voltage - Collector Emitter Breakdown (Max):
350V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
125W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
50µA
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTXV2N6308. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 8a. It features bipolar (bjt) transistor npn 350v 8a 125w through hole to-204aa (to-3). Furthermore, 12 @ 3a, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 5v @ 2.67a, 8a is the maximum Vce saturation. The product military, mil-prf-19500/498, is a highly preferred choice for users. Moreover, the product comes in to-204aa, to-3. to-204aa (to-3) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 350v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 125w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 50µa is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.

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2N6306, 2N6308(Datasheets)

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