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This is manufactured by Microsemi Corporation. The manufacturer part number is 2N2432A. The maximum collector current includes 100ma. It features bipolar (bjt) transistor npn 30v 100ma 300mw through hole to-18 (to-206aa). The transistor is a npn type. The product is available in through hole configuration. In addition, 10na is the maximum current at collector cutoff. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. to-18 (to-206aa) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 300mw. Moreover, the product comes in to-206aa, to-18-3 metal can. Furthermore, 80 @ 1ma, 5v is the minimum DC current gain at given voltage. The microsemi corporation's product offers user-desired applications.
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