Microsemi Corporation JANTX2N3439L

JANTX2N3439L Microsemi Corporation
Microsemi Corporation

Product Information

Current - Collector (Ic) (Max):
1A
Detailed Description:
Bipolar (BJT) Transistor NPN 350V 1A 800mW Through Hole TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 20mA, 10V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 4mA, 50mA
Series:
Military, MIL-PRF-19500/368
Package / Case:
TO-205AA, TO-5-3 Metal Can
Supplier Device Package:
TO-5
Voltage - Collector Emitter Breakdown (Max):
350V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
800mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
2µA
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTX2N3439L. The maximum collector current includes 1a. It features bipolar (bjt) transistor npn 350v 1a 800mw through hole to-5. Furthermore, 40 @ 20ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 500mv @ 4ma, 50ma is the maximum Vce saturation. The product military, mil-prf-19500/368, is a highly preferred choice for users. Moreover, the product comes in to-205aa, to-5-3 metal can. to-5 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 350v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 800mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 2µa is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.

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