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This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N4449. It has typical 30 weeks of manufacturer standard lead time. In addition, 400na is the maximum current at collector cutoff. It features bipolar (bjt) transistor npn 20v 360mw through hole. The transistor is a npn type. The product is available in through hole configuration. The 450mv @ 10ma, 100ma is the maximum Vce saturation. The product military, mil-prf-19500/317, is a highly preferred choice for users. Moreover, the product comes in to-206ab, to-46-3 metal can. out of bounds is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 20v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 360mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. Furthermore, 20 @ 100ma, 1v is the minimum DC current gain at given voltage. The microsemi corporation's product offers user-desired applications.
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