Microsemi Corporation JANTXV2N3421S

JANTXV2N3421S Microsemi Corporation
Microsemi Corporation

Product Information

Current - Collector (Ic) (Max):
3A
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 3A 1W Through Hole TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 1A, 2V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 200mA, 2A
Series:
Military, MIL-PRF-19500/393
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39 (TO-205AD)
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
1W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
5µA
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTXV2N3421S. The maximum collector current includes 3a. It features bipolar (bjt) transistor npn 80v 3a 1w through hole to-39 (to-205ad). Furthermore, 40 @ 1a, 2v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 500mv @ 200ma, 2a is the maximum Vce saturation. The product military, mil-prf-19500/393, is a highly preferred choice for users. Moreover, the product comes in to-205ad, to-39-3 metal can. to-39 (to-205ad) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 5µa is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.

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