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This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N3879. The maximum collector current includes 7a. It features bipolar (bjt) transistor npn 75v 7a 35w through hole to-66 (to-213aa). Furthermore, 20 @ 4a, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 1.2v @ 400ma, 4a is the maximum Vce saturation. The product military, mil-prf-19500/526, is a highly preferred choice for users. Moreover, the product comes in to-213aa, to-66-2. to-66 (to-213aa) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 75v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 35w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 25ma (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
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