Microsemi Corporation 2N4449UB

Microsemi Corporation

Product Information

Current - Collector Cutoff (Max):
400nA
Detailed Description:
Bipolar (BJT) Transistor NPN 20V 360mW Surface Mount UB
Transistor Type:
NPN
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
450mV @ 10mA, 100mA
Series:
Military, MIL-PRF-19500/317
Supplier Device Package:
UB
Voltage - Collector Emitter Breakdown (Max):
20V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
360mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 100mA, 1V
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is 2N4449UB. In addition, 400na is the maximum current at collector cutoff. It features bipolar (bjt) transistor npn 20v 360mw surface mount ub. The transistor is a npn type. The product is available in surface mount configuration. The 450mv @ 10ma, 100ma is the maximum Vce saturation. The product military, mil-prf-19500/317, is a highly preferred choice for users. ub is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 20v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 360mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. Furthermore, 20 @ 100ma, 1v is the minimum DC current gain at given voltage. The microsemi corporation's product offers user-desired applications.

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