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This is manufactured by Microsemi Corporation. The manufacturer part number is 2N6671. The maximum collector current includes 8a. It features bipolar (bjt) transistor pnp 300v 8a 150w through hole to-3. The transistor is a pnp type. The product is available in through hole configuration. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. to-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 300v. In addition, bulk is the available packaging type of the product. The maximum power of the product is 150w. Moreover, the product comes in to-204aa, to-3. Furthermore, 10 @ 8a, 300v is the minimum DC current gain at given voltage. The microsemi corporation's product offers user-desired applications.
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