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This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N5415. The maximum collector current includes 1a. It features bipolar (bjt) transistor pnp 200v 1a 750mw through hole to-5. Furthermore, 30 @ 50ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 2v @ 5ma, 50ma is the maximum Vce saturation. The product military, mil-prf-19500/485, is a highly preferred choice for users. Moreover, the product comes in to-205aa, to-5-3 metal can. to-5 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 200v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 750mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 1ma is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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