onsemi NSVMMUN2132LT1G-M01

NSVMMUN2132LT1G-M01 onsemi
onsemi

Product Information

Resistor - Base (R1):
4.7 kOhms
HTSUS:
8541.21.0095
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Emitter Base (R2):
4.7 kOhms
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
REACH Status:
REACH Unaffected
Transistor Type:
PNP - Pre-Biased
Package:
Bulk
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Power - Max:
246 mW
Base Product Number:
NSVMMUN2132
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NSVMMUN2132LT1G-M01. Resistor - Base - 4.7 kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 100 ma. The maximum collector emitter breakdown voltage of the product is 50 v. Resistor - Emittor Base (R2) - 4.7 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 15 @ 5ma, 10v is the minimum DC current gain at given voltage. The 250mv @ 1ma, 10ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp - pre-biased type. It is shipped in bulk package . In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. sot-23-3 (to-236) is the supplier device package value. The maximum power of the product is 246 mw. Moreover, it corresponds to nsvmmun2132, a base product number of the product. The product is designated with the ear99 code number.

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Obsolete Notice 30/Sep/2022(PCN Obsolescence/ EOL)

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