NXP USA Inc. PDTA123JMB,315

PDTA123JMB-315 NXP USA Inc. PDTA123JMB,315
NXP USA Inc.

Product Information

Resistor - Base (R1):
2.2 kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
100 mA
Resistor - Emitter Base (R2):
47 kOhms
Package / Case:
SC-101, SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 5V
Frequency - Transition:
180 MHz
Voltage - Collector Emitter Breakdown (Max):
50 V
Manufacturer:
NXP USA Inc.
Transistor Type:
PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic:
100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1006B-3
Packaging:
Bulk
Power - Max:
250 mW
Base Product Number:
PDTA123
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PDTA123JMB,315. Resistor - Base - 2.2 kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 100 ma. Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in sc-101, sot-883. Furthermore, 100 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 180 mhz. The maximum collector emitter breakdown voltage of the product is 50 v. The nxp usa inc.'s product offers user-desired applications. The transistor is a pnp - pre-biased type. The 100mv @ 250µa, 5ma is the maximum Vce saturation. In addition, 1µa is the maximum current at collector cutoff. The product is available in surface mount configuration. dfn1006b-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 250 mw. Moreover, it corresponds to pdta123, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
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Yes. We ship PDTA123JMB,315 Internationally to many countries around the world.