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This is manufactured by NXP USA Inc.. The manufacturer part number is PDTA114EMB,315. Resistor - Base - 10 kohms. It is assigned with possible HTSUS value of 0000.00.0000. The maximum collector current includes 100 ma. Resistor - Emittor Base (R2) - 10 kohms. Moreover, the product comes in 3-xfdfn. Furthermore, 30 @ 5ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 180 mhz. The 150mv @ 500µa, 10ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp - pre-biased type. It is shipped in bulk package . In addition, 1µa is the maximum current at collector cutoff. The product is available in surface mount configuration. dfn1006b-3 is the supplier device package value. The maximum power of the product is 250 mw. Moreover, it corresponds to pdta114, a base product number of the product.
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