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This is manufactured by NXP USA Inc.. The manufacturer part number is PDTA113EMB,315. Resistor - Base - 1 kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 100 ma. Resistor - Emittor Base (R2) - 1 kohms. Moreover, the product comes in sc-101, sot-883. Furthermore, 30 @ 40ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 180 mhz. The 150mv @ 1.5ma, 30ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp - pre-biased type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. dfn1006b-3 is the supplier device package value. The maximum power of the product is 250 mw. Moreover, it corresponds to pdta113, a base product number of the product. The product is designated with the ear99 code number.
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