Toshiba Semiconductor and Storage RN2104MFV,L3XHF(CT

RN2104MFV-L3XHF-CT Toshiba Semiconductor and Storage RN2104MFV,L3XHF(CT
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
47 kOhms
HTSUS:
8541.21.0095
Current - Collector (Ic) (Max):
100 mA
Resistor - Emitter Base (R2):
47 kOhms
Package / Case:
SOT-723
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Frequency - Transition:
250 MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
PNP - Pre-Biased
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
standardLeadTime:
52 Weeks
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
VESM
Power - Max:
150 mW
Base Product Number:
RN2104
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2104MFV,L3XHF(CT. Resistor - Base - 47 kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 100 ma. Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in sot-723. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250 mhz. The 300mv @ 500µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp - pre-biased type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 52 weeks standard lead time. In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. vesm is the supplier device package value. The maximum power of the product is 150 mw. Moreover, it corresponds to rn2104, a base product number of the product. The product is designated with the ear99 code number.

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