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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2101MFV,L3XHF(CT. Resistor - Base - 4.7 kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 100 ma. Resistor - Emittor Base (R2) - 4.7 kohms. Moreover, the product comes in sot-723. Furthermore, 30 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250 mhz. The 300mv @ 500µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp - pre-biased type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 52 weeks standard lead time. In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. vesm is the supplier device package value. The maximum power of the product is 150 mw. Moreover, it corresponds to rn2101, a base product number of the product. The product is designated with the ear99 code number.
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