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This is manufactured by onsemi. The manufacturer part number is FJN3315RTA. Resistor - Base - 2.2 kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 100 ma. The maximum collector emitter breakdown voltage of the product is 50 v. Resistor - Emittor Base (R2) - 10 kohms. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 33 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250 mhz. The 300mv @ 500µa, 10ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - pre-biased type. It is shipped in tape & box (tb) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. The maximum power of the product is 300 mw. Moreover, it corresponds to fjn331, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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