Toshiba Semiconductor and Storage RN1112MFV,L3F

RN1112MFV-L3F Toshiba Semiconductor and Storage RN1112MFV,L3F
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
22 kOhms
HTSUS:
8541.21.0095
Current - Collector (Ic) (Max):
100 mA
Package / Case:
SOT-723
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
edacadModel:
RN1112MFV,L3F Models
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50 V
edacadModelUrl:
/en/models/11478769
Transistor Type:
NPN - Pre-Biased
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
52 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
VESM
Power - Max:
150 mW
Base Product Number:
RN1112
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1112MFV,L3F. Resistor - Base - 22 kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 100 ma. Moreover, the product comes in sot-723. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The 300mv @ 500µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a npn - pre-biased type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 52 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. vesm is the supplier device package value. The maximum power of the product is 150 mw. Moreover, it corresponds to rn1112, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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Yes. Our products in Single, Pre-Biased Bipolar Transistors category are shipped in lowest possible time.
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Yes. We ship RN1112MFV,L3F Internationally to many countries around the world.