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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1101MFV,L3F(CT. Resistor - Base - 4.7 kohms. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. Resistor - Emittor Base (R2) - 4.7 kohms. Moreover, the product comes in sot-723. Furthermore, 30 @ 10ma, 5v is the minimum DC current gain at given voltage. The 300mv @ 500µa, 5ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - pre-biased type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. vesm is the supplier device package value. The maximum power of the product is 150 mw. Moreover, it corresponds to rn1101, a base product number of the product. The product is designated with the ear99 code number.
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