This is manufactured by Renesas Electronics America. The manufacturer part number is FN4L4M-T1B-A. Resistor - Base - 22 ohms. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 100ma 200mw. Furthermore, 85 @ 5ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The 200mv @ 250µ, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. In addition, box is the available packaging type of the product. Resistor - Emittor Base (R2) - 22 ohms. The maximum power of the product is 200mw. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The renesas electronics america's product offers user-desired applications.
Mult Dev EOL 15/Dec/2018(PCN Obsolescence/ EOL)
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You can order Renesas Electronics America brand products with FN4L4M-T1B-A directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Renesas Electronics America FN4L4M-T1B-A. You can also check on our website or by contacting our customer support team for further order details on Renesas Electronics America FN4L4M-T1B-A.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18040892 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Renesas Electronics America" products on our website by using Enrgtech's Unique Manufacturing Part Number ET18040892.
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This is manufactured by Renesas Electronics America. The manufacturer part number is FN4L4M-T1B-A. Resistor - Base - 22 ohms. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 100ma 200mw. Furthermore, 85 @ 5ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The 200mv @ 250µ, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. In addition, box is the available packaging type of the product. Resistor - Emittor Base (R2) - 22 ohms. The maximum power of the product is 200mw. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The renesas electronics america's product offers user-desired applications.
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Don’t hesitate to ask questions for better clarification.