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This is manufactured by Renesas Electronics America. The manufacturer part number is FA4F4M-T1B-A. Resistor - Base - 22 ohms. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 100ma 200mw. Furthermore, 60 @ 50ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The 200mv @ 250µ, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. In addition, box is the available packaging type of the product. Resistor - Emittor Base (R2) - 22 ohms. The maximum power of the product is 200mw. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The renesas electronics america's product offers user-desired applications.
For more information please check the datasheets.
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