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This is manufactured by NXP USA Inc.. The manufacturer part number is PDTD123ES,126. Resistor - Base - 2.2 kohms. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. Resistor - Emittor Base (R2) - 2.2 kohms. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 40 @ 50ma, 5v is the minimum DC current gain at given voltage. The 300mv @ 2.5ma, 50ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - pre-biased type. It is shipped in tape & box (tb) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. The maximum power of the product is 500 mw. Moreover, it corresponds to pdtd123, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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