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This is manufactured by NXP USA Inc.. The manufacturer part number is PDTA123ES,126. Resistor - Base - 2.2 kohms. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. Resistor - Emittor Base (R2) - 2.2 kohms. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 30 @ 20ma, 5v is the minimum DC current gain at given voltage. In addition, it is reach unaffected. The nxp usa inc.'s product offers user-desired applications. The transistor is a pnp - pre-biased type. The 150mv @ 500µa, 10ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. In addition, tape & box (tb) is the available packaging type of the product. The maximum power of the product is 500 mw. Moreover, it corresponds to pdta123, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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