NXP USA Inc. PDTA123EK,115

PDTA123EK-115 NXP USA Inc. PDTA123EK,115
NXP USA Inc.

Product Information

Resistor - Base (R1):
2.2 kOhms
Current - Collector (Ic) (Max):
100 mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Emitter Base (R2):
2.2 kOhms
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
REACH Status:
REACH Unaffected
Transistor Type:
PNP - Pre-Biased
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SMT3; MPAK
Power - Max:
250 mW
Base Product Number:
PDTA123
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PDTA123EK,115. Resistor - Base - 2.2 kohms. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. Resistor - Emittor Base (R2) - 2.2 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 30 @ 20ma, 5v is the minimum DC current gain at given voltage. The 150mv @ 500µa, 10ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp - pre-biased type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa is the maximum current at collector cutoff. The product is available in surface mount configuration. smt3; mpak is the supplier device package value. The maximum power of the product is 250 mw. Moreover, it corresponds to pdta123, a base product number of the product. The product is designated with the ear99 code number.

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PDTA123E Series(Datasheets)
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NXP USA Inc REACH(Environmental Information)
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NXP USA Inc RoHS Cert(Environmental Information)
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All Dev Label Update 15/Dec/2020(PCN Packaging)

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