NXP USA Inc. PDTA115TS,126

PDTA115TS-126 NXP USA Inc. PDTA115TS,126
PDTA115TS,126
NXP USA Inc.

Product Information

Resistor - Base (R1):
100 kOhms
Current - Collector (Ic) (Max):
100 mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 250µA, 5mA
REACH Status:
REACH Unaffected
Transistor Type:
PNP - Pre-Biased
Package:
Tape & Box (TB)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
500 mW
Base Product Number:
PDTA115
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PDTA115TS,126. Resistor - Base - 100 kohms. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 100 @ 1ma, 5v is the minimum DC current gain at given voltage. The 150mv @ 250µa, 5ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp - pre-biased type. It is shipped in tape & box (tb) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. The maximum power of the product is 500 mw. Moreover, it corresponds to pdta115, a base product number of the product. The product is designated with the ear99 code number.

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PDTA115TT,215 Datasheet(Datasheets)
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NXP USA Inc REACH(Environmental Information)
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NXP USA Inc RoHS Cert(Environmental Information)
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All Dev Label Update 15/Dec/2020(PCN Packaging)

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FAQs

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