Toshiba Semiconductor and Storage RN2102CT(TPL3)

RN2102CT-TPL3- Toshiba Semiconductor and Storage RN2102CT(TPL3)
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
10 kOhms
HTSUS:
8541.21.0095
Current - Collector (Ic) (Max):
50 mA
Resistor - Emitter Base (R2):
10 kOhms
Package / Case:
SC-101, SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
20 V
Transistor Type:
PNP - Pre-Biased
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
CST3
Power - Max:
50 mW
Base Product Number:
RN2102
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2102CT(TPL3). Resistor - Base - 10 kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 50 ma. Resistor - Emittor Base (R2) - 10 kohms. Moreover, the product comes in sc-101, sot-883. Furthermore, 60 @ 10ma, 5v is the minimum DC current gain at given voltage. The 150mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 20 v. The transistor is a pnp - pre-biased type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. cst3 is the supplier device package value. The maximum power of the product is 50 mw. Moreover, it corresponds to rn2102, a base product number of the product. The product is designated with the ear99 code number.

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RN2101CT-06CT(Datasheets)

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