Minimum DC Current Gain:
68
Transistor Type:
NPN
Dimensions:
2.92 x 1.3 x 0.93mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Continuous Collector Current:
100 mA
Maximum Emitter Base Voltage:
10 V
Maximum Collector Emitter Voltage:
50 V
Height:
0.93mm
Width:
1.3mm
Length:
2.92mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
0.3 V
Typical Resistor Ratio:
0.047
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
2.2 kΩ
Base Part Number:
FJV311
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
68 @ 5mA, 5V
Transistor Type:
NPN - Pre-Biased
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Resistor - Base (R1):
2.2 kOhms
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
47 kOhms
Power - Max:
200mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
