ON Semiconductor FJV3111RMTF

FJV3111RMTF ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
FJV311
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 200mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Transistor Type:
NPN - Pre-Biased
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Resistor - Base (R1):
22 kOhms
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Tape & Reel (TR)
Power - Max:
200mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FJV3111RMTF. Base Part Number: fjv311. It features pre-biased bipolar transistor (bjt) npn - pre-biased 40v 100ma 250mhz 200mw surface mount sot-23-3 (to-236). Furthermore, 100 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The transition frequency of the product is 250mhz. The product is available in surface mount configuration. Resistor - Base - 22 kohms. The 300mv @ 1ma, 10ma is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 200mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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FJV3111R(Datasheets)
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Mold Compound 12/Dec/2007(PCN Design/Specification)

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