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This is manufactured by ON Semiconductor. The manufacturer part number is FJNS4209RBU. Base Part Number: fjns42. It features pre-biased bipolar transistor (bjt) pnp - pre-biased 40v 100ma 200mhz 300mw through hole to-92s. Furthermore, 100 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a pnp - pre-biased type. The transition frequency of the product is 200mhz. The product is available in through hole configuration. Resistor - Base - 4.7 kohms. The 300mv @ 1ma, 10ma is the maximum Vce saturation. to-92s is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, bulk is the available packaging type of the product. The maximum power of the product is 300mw. Moreover, the product comes in to-226-3, to-92-3 short body. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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