Minimum DC Current Gain:
56
Transistor Type:
PNP
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 mW
Maximum Continuous Collector Current:
100 mA
Maximum Emitter Base Voltage:
10 V
Maximum Collector Emitter Voltage:
50 V
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
0.3 V
Typical Resistor Ratio:
1
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
22 kΩ
Base Part Number:
FJN430
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
56 @ 5mA, 5V
Transistor Type:
PNP - Pre-Biased
Frequency - Transition:
200MHz
Mounting Type:
Through Hole
Resistor - Base (R1):
22 kOhms
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
22 kOhms
Power - Max:
300mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
