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This is manufactured by ON Semiconductor. The manufacturer part number is FJN4301RBU. Base Part Number: fjn430. It features pre-biased bipolar transistor (bjt) pnp - pre-biased 50v 100ma 200mhz 300mw through hole to-92-3. Furthermore, 20 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a pnp - pre-biased type. The transition frequency of the product is 200mhz. The product is available in through hole configuration. Resistor - Base - 4.7 kohms. The 300mv @ 500µa, 10ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, bulk is the available packaging type of the product. Resistor - Emittor Base (R2) - 4.7 kohms. The maximum power of the product is 300mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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