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This is manufactured by ON Semiconductor. The manufacturer part number is FJN3312RTA. Base Part Number: fjn331. It features pre-biased bipolar transistor (bjt) npn - pre-biased 40v 100ma 250mhz 300mw through hole to-92-3. Furthermore, 100 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The transition frequency of the product is 250mhz. The product is available in through hole configuration. Resistor - Base - 47 kohms. The 300mv @ 1ma, 10ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, tape & box (tb) is the available packaging type of the product. The maximum power of the product is 300mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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