Deliver to
United Kingdom
Due to adverse weather conditions in the UK, some orders might face delayed processing. We apologise for the inconvenience and thank you for your patience.
This is manufactured by ON Semiconductor. The manufacturer part number is FJN3311RBU. Base Part Number: fjn331. It features pre-biased bipolar transistor (bjt) npn - pre-biased 40v 100ma 250mhz 300mw through hole to-92-3. Furthermore, 100 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The transition frequency of the product is 250mhz. The product is available in through hole configuration. Resistor - Base - 22 kohms. The 300mv @ 1ma, 10ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, bulk is the available packaging type of the product. The maximum power of the product is 300mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
Basket Total:
£ 0