Minimum DC Current Gain:
20
Transistor Type:
PNP
Dimensions:
2.92 x 1.3 x 0.93mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Continuous Collector Current:
-100 mA
Maximum Emitter Base Voltage:
-10 V
Maximum Collector Emitter Voltage:
-50 V
Height:
0.93mm
Width:
1.3mm
Length:
2.92mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
-0.3 V
Typical Resistor Ratio:
1
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
4.7 kΩ
Resistor - Base (R1):
4.7 kOhms
Current - Collector (Ic) (Max):
100 mA
HTSUS:
0000.00.0000
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Emitter Base (R2):
4.7 kOhms
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 10mA, 5V
Frequency - Transition:
200 MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
REACH Status:
REACH Unaffected
Transistor Type:
PNP - Pre-Biased
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Power - Max:
200 mW
Base Product Number:
FJV410
ECCN:
EAR99
