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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2422TE85LF. Resistor - Base - 2.2 kohms. The maximum collector current includes 800 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. Resistor - Emittor Base (R2) - 2.2 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 65 @ 100ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 200 mhz. The 250mv @ 1ma, 50ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp - pre-biased type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 40 weeks standard lead time. In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. The maximum power of the product is 200 mw. Moreover, it corresponds to rn2422, a base product number of the product. The product is designated with the ear99 code number.
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