ON Semiconductor DTC114EET1G

DTC114EET1G ON Semiconductor
DTC114EET1G
ON Semiconductor

Product Information

Minimum DC Current Gain:
35
Transistor Type:
NPN
Dimensions:
1.65 x 0.9 x 0.8mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
338 mW
Maximum Continuous Collector Current:
100 mA
Maximum Collector Emitter Voltage:
50 V
Height:
0.8mm
Width:
0.9mm
Length:
1.65mm
Package Type:
SOT-416 (SC-75)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
0.25 V
Typical Resistor Ratio:
1
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
10 kΩ
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
DTC114
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200mW Surface Mount SC-75, SOT-416
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 5mA, 10V
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Surface Mount
Resistor - Base (R1):
10 kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Supplier Device Package:
SC-75, SOT-416
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
10 kOhms
Power - Max:
200mW
Customer Reference:
Package / Case:
SC-75, SOT-416
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is DTC114EET1G. It features up to 35 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 1.65 x 0.9 x 0.8mm. The product is available in surface mount configuration. Provides up to 338 mw maximum power dissipation. The product has a maximum 100 ma continuous collector current . Whereas features a 50 v of collector emitter voltage (max). In addition, the height is 0.8mm. Furthermore, the product is 0.9mm wide. Its accurate length is 1.65mm. The package is a sort of sot-416 (sc-75). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 0.25 v collector emitter saturation voltage . In addition, it has a typical 1 resistor ratio . The product offers single transistor configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. Whereas, it has a typical 10 kω input resistor . It has typical 8 weeks of manufacturer standard lead time. Base Part Number: dtc114. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 100ma 200mw surface mount sc-75, sot-416. Furthermore, 35 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. Resistor - Base - 10 kohms. The 250mv @ 300µa, 10ma is the maximum Vce saturation. sc-75, sot-416 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 10 kohms. The maximum power of the product is 200mw. Moreover, the product comes in sc-75, sot-416. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Wafer Source Addition 26/Nov/2014(PCN Assembly/Origin)
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MUN(2,5)211, MMUN2211L, DTC114Exx, NSBC114EF3(Datasheets)
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Copper Wire 29/Oct/2009(PCN Design/Specification)

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FAQs

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Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
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Yes. We ship DTC114EET1G Internationally to many countries around the world.