Minimum DC Current Gain:
80
Transistor Type:
PNP
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
400 mW
Maximum Continuous Collector Current:
100 mA
Maximum Collector Emitter Voltage:
50 V
Height:
1.01mm
Width:
1.4mm
Length:
3.04mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
0.25 V
Typical Resistor Ratio:
0.1
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
4.7 kΩ
Manufacturer Standard Lead Time:
40 Weeks
Base Part Number:
MMUN2133
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
Transistor Type:
PNP - Pre-Biased
Mounting Type:
Surface Mount
Resistor - Base (R1):
4.7 kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
47 kOhms
Power - Max:
246mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
