Rohm Semiconductor DTD743EMT2L

DTD743EMT2L Rohm Semiconductor
Rohm Semiconductor

Product Information

Base Part Number:
DTD743
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 30V 200mA 260MHz 150mW Surface Mount VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce:
115 @ 100mA, 2V
Transistor Type:
NPN - Pre-Biased
Frequency - Transition:
260MHz
Mounting Type:
Surface Mount
Resistor - Base (R1):
4.7 kOhms
Vce Saturation (Max) @ Ib, Ic:
300mV @ 2.5mA, 50mA
Supplier Device Package:
VMT3
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
4.7 kOhms
Power - Max:
150mW
Customer Reference:
Package / Case:
SOT-723
Current - Collector (Ic) (Max):
200mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is DTD743EMT2L. Base Part Number: dtd743. It features pre-biased bipolar transistor (bjt) npn - pre-biased 30v 200ma 260mhz 150mw surface mount vmt3. Furthermore, 115 @ 100ma, 2v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The transition frequency of the product is 260mhz. The product is available in surface mount configuration. Resistor - Base - 4.7 kohms. The 300mv @ 2.5ma, 50ma is the maximum Vce saturation. vmt3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 4.7 kohms. The maximum power of the product is 150mw. Moreover, the product comes in sot-723. The maximum collector current includes 200ma. In addition, 500na is the maximum current at collector cutoff. The rohm semiconductor's product offers user-desired applications.

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DTD743EE,EM(Datasheets)

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