Toshiba Semiconductor and Storage RN1115MFV,L3F

RN1115MFV-L3F Toshiba Semiconductor and Storage RN1115MFV,L3F
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
2.2 kOhms
Current - Collector (Ic) (Max):
100 mA
HTSUS:
8541.21.0075
RoHS Status:
RoHS Compliant
Resistor - Emitter Base (R2):
10 kOhms
Package / Case:
SOT-723
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
edacadModel:
RN1115MFV,L3F Models
Frequency - Transition:
250 MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50 V
edacadModelUrl:
/en/models/6679144
Transistor Type:
NPN - Pre-Biased
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
VESM
Power - Max:
150 mW
Base Product Number:
RN1115
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1115MFV,L3F. Resistor - Base - 2.2 kohms. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs compliant. Resistor - Emittor Base (R2) - 10 kohms. Moreover, the product comes in sot-723. Furthermore, 50 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250 mhz. The 300mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a npn - pre-biased type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. vesm is the supplier device package value. The maximum power of the product is 150 mw. Moreover, it corresponds to rn1115, a base product number of the product. The product is designated with the ear99 code number.

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