Manufacturer Standard Lead Time:
16 Weeks
Current - Collector (Ic) (Max):
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Transistor Type:
NPN - Pre-Biased
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Resistor - Base (R1) (Ohms):
2.2k
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Standard Package:
1
Supplier Device Package:
S-Mini
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2) (Ohms):
47k
Power - Max:
200mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector Cutoff (Max):
500nA
Manufacturer:
Toshiba Semiconductor and Storage
