ON Semiconductor NSBC123TF3T5G

NSBC123TF3T5G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NSBC123
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 254mW Surface Mount SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 5mA, 10V
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Surface Mount
Resistor - Base (R1):
2.2 kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
Supplier Device Package:
SOT-1123
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Power - Max:
254mW
Customer Reference:
Package / Case:
SOT-1123
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NSBC123TF3T5G. Base Part Number: nsbc123. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 100ma 254mw surface mount sot-1123. Furthermore, 160 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The product is available in surface mount configuration. Resistor - Base - 2.2 kohms. The 250mv @ 1ma, 10ma is the maximum Vce saturation. sot-1123 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 254mw. Moreover, the product comes in sot-1123. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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MUNx238L, MMUN2238L, DTC123T, NSBC123TF3(Datasheets)
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Wire Bond 01/Dec/2010(PCN Design/Specification)
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Mult Devices Tape Design 06/Mar/2018(PCN Design/Specification)

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FAQs

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