ON Semiconductor DTA123TET1G

DTA123TET1G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
DTA123
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200mW Surface Mount SC-75
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 5mA, 10V
Transistor Type:
PNP - Pre-Biased
Mounting Type:
Surface Mount
Resistor - Base (R1):
2.2 kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Supplier Device Package:
SC-75
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Tape & Reel (TR)
Power - Max:
200mW
Customer Reference:
Package / Case:
SC-75, SOT-416
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is DTA123TET1G. It has typical 8 weeks of manufacturer standard lead time. Base Part Number: dta123. It features pre-biased bipolar transistor (bjt) pnp - pre-biased 50v 100ma 200mw surface mount sc-75. Furthermore, 160 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp - pre-biased type. The product is available in surface mount configuration. Resistor - Base - 2.2 kohms. The 250mv @ 300µa, 10ma is the maximum Vce saturation. sc-75 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 200mw. Moreover, the product comes in sc-75, sot-416. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Dev Wafer Fab Site Add 2/Nov/2017(PCN Assembly/Origin)
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MUN2138/5138, DTA123T, NSBA123TF3(Datasheets)

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FAQs

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