Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2316(TE85L,F). It has typical 16 weeks of manufacturer standard lead time. Base Part Number: rn231*. It features pre-biased bipolar transistor (bjt) pnp - pre-biased 50v 100ma 200mhz 100mw surface mount usm. Furthermore, 50 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a pnp - pre-biased type. The transition frequency of the product is 200mhz. The product is available in surface mount configuration. Resistor - Base - 4.7 kohms. The 300mv @ 250µa, 5ma is the maximum Vce saturation. usm is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 10 kohms. The maximum power of the product is 100mw. Moreover, the product comes in sc-70, sot-323. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
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