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This is manufactured by Microsemi Corporation. The manufacturer part number is JTDB75. The maximum collector current includes 8a. It features rf transistor npn 55v 8a 960mhz ~ 1.215ghz 220w chassis mount 55aw. The transistor is a npn type. The transition frequency of the product is 960mhz ~ 1.215ghz. The product is available in chassis mount configuration. 55aw is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 55v. In addition, bulk is the available packaging type of the product. The product has 200°c (tj) operating temperature range. The maximum power of the product is 220w. The 7db ~ 8.2db is the gain value of a bespoke product. Moreover, the product comes in 55aw. Furthermore, 20 @ 1a, 5v is the minimum DC current gain at given voltage. The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
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