Toshiba Semiconductor and Storage MT3S113(TE85L,F)

Toshiba Semiconductor and Storage

Product Information

Base Part Number:
MT3S113
Detailed Description:
RF Transistor NPN 5.3V 100mA 12.5GHz 800mW Surface Mount S-Mini
Noise Figure (dB Typ @ f):
1.45dB @ 1GHz
Transistor Type:
NPN
Frequency - Transition:
12.5GHz
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
100mA
Customer Reference:
Supplier Device Package:
S-Mini
Voltage - Collector Emitter Breakdown (Max):
5.3V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
800mW
Gain:
11.8dB
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 30mA, 5V
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is MT3S113(TE85L,F). Base Part Number: mt3s113. It features rf transistor npn 5.3v 100ma 12.5ghz 800mw surface mount s-mini. It has given noise figure of 1.45db @ 1ghz at given frequency. The transistor is a npn type. The transition frequency of the product is 12.5ghz. The product is available in surface mount configuration. The maximum collector current includes 100ma. s-mini is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 5.3v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 800mw. The 11.8db is the gain value of a bespoke product. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 200 @ 30ma, 5v is the minimum DC current gain at given voltage. The toshiba semiconductor and storage's product offers user-desired applications.

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