Toshiba Semiconductor and Storage MT3S113P(TE12L,F)

MT3S113P-TE12L-F- Toshiba Semiconductor and Storage MT3S113P(TE12L,F)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
5.3V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-243AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 30mA, 5V
Noise Figure (dB Typ @ f):
1.45dB @ 1GHz
Frequency - Transition:
7.7GHz
REACH Status:
Vendor Undefined
Gain:
10.5dB
Transistor Type:
NPN
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PW-MINI
Power - Max:
1.6W
Base Product Number:
MT3S113
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is MT3S113P(TE12L,F). The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 5.3v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-243aa. Furthermore, 200 @ 30ma, 5v is the minimum DC current gain at given voltage. It has given noise figure of 1.45db @ 1ghz at given frequency. The transition frequency of the product is 7.7ghz. In addition, it is vendor undefined. The 10.5db is the gain value of a bespoke product. The transistor is a npn type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. The product is available in surface mount configuration. pw-mini is the supplier device package value. The maximum power of the product is 1.6w. Moreover, it corresponds to mt3s113, a base product number of the product. The product is designated with the ear99 code number.

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