Minimum DC Current Gain:
28
Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
400 mW
Maximum Collector Emitter Saturation Voltage:
0.5 V
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
15 V
Maximum Operating Frequency:
1100 MHz
Height:
4.58mm
Width:
3.86mm
Length:
4.58mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
50 mA
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
SS9018
Detailed Description:
RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3
Transistor Type:
NPN
Frequency - Transition:
1.1GHz
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
50mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
15V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
400mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
97 @ 1mA, 5V
Manufacturer:
ON Semiconductor
