Transistor Type:
NPN
Dimensions:
2.92 x 1.3 x 0.93mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Emitter Saturation Voltage:
0.4 V
Maximum Collector Base Voltage:
20 V
Maximum Collector Emitter Voltage:
12 V
Maximum Base Emitter Saturation Voltage:
1 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
2.5 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
50 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
18 Weeks
Base Part Number:
MMBT5179
Detailed Description:
RF Transistor NPN 12V 50mA 2GHz 225mW Surface Mount SOT-23-3 (TO-236)
Noise Figure (dB Typ @ f):
5dB @ 200MHz
Transistor Type:
NPN
Frequency - Transition:
2GHz
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
50mA
Customer Reference:
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
12V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Gain:
15dB
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 3mA, 1V
Manufacturer:
ON Semiconductor
